2 Inch GaN on Sapphire Substrate for Semiconductor Applications

GaN Substrate Supply Case

HMT supplied 2 inch GaN on Sapphire Substrate wafers to an international customer for semiconductor material evaluation and GaN-based device development. The solution was selected for its stable wafer structure, cost-effective sapphire platform and suitability for subsequent semiconductor processing.

The supplied wafers combine a gallium nitride (GaN) layer with a sapphire substrate and are available in both undoped and Si-doped n-type configurations. This allows customers to select the appropriate electrical characteristics for different research and device development requirements.

Customized 2 Inch GaN Substrate Solution

For this project, HMT provided 2 inch GaN on Sapphire Substrate wafers with a GaN layer thickness of approximately 4.5 µm. The wafer surface can be supplied with single-side polishing to meet the requirements of subsequent processing and characterization.

The main specifications included:

• Wafer diameter: 2 inch
• GaN layer thickness: approximately 4.5 µm
• Conductivity type: undoped or Si-doped n-type
• Substrate: sapphire
• Surface: single-side polished
• Packaging: 25 wafers per cassette
• Application: semiconductor research and GaN device development

Customized wafer specifications can be discussed according to the customer's process requirements.

Why GaN on Sapphire?

GaN on Sapphire provides a practical material platform for customers developing GaN-based semiconductor and optoelectronic devices. Sapphire offers good mechanical stability and a cost-effective substrate solution, while the GaN layer provides the wide-bandgap semiconductor characteristics required for advanced device development.

This combination is particularly useful when customers require a scalable and economical GaN material platform for laboratory research, prototype fabrication and semiconductor process evaluation.

Applications

The supplied 2 inch GaN on Sapphire Substrate can be used for a variety of GaN-based applications, including:

• Blue and UV LED development
• Optoelectronic device research
• RF and microwave semiconductor research
• GaN device fabrication
• Material characterization
• University and laboratory research
• Prototype semiconductor development