A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a high-performance power semiconductor device whose performance begins with the core material—the GaN epi wafer. GaN Epi Wafer Manufacturer HMT produces these critical wafers by growing a thin layer of Aluminum Gallium Nitride (AlGaN) on a high-quality Gallium Nitride (GaN) layer.