6 Inch 4H-HPSI SiC Wafer – P Grade

As a premier 4H-SiC wafer manufacturer, Homray offers 6 inch high-purity semi-insulating (HPSI) silicon carbide substrates that serve as the industry-standard foundation for high-performance RF devices and GaN-on-SiC epitaxy. Our P-grade wafers are engineered specifically for demanding 5G infrastructure, radar systems, and aerospace applications.

Product Overview

Our HPSI 4H-SiC wafers feature exceptional resistivity (≥1E7 Ω·cm) and ultra‑low micropipe density (< 0.5 cm⁻²), ensuring superior electrical insulation and minimal defects. This translates directly into higher device yields and better thermal management for HEMTs and MMICs. The precise diameter (150 ± 0.2 mm) and thickness (500 ± 25 µm) guarantee compatibility with standard semiconductor fabrication lines.

Key Applications

• 5G Communications – Base stations, massive MIMO, and core network hardware
• Defense & Aerospace – Radar, electronic warfare (EW), and satellite transceivers
• RF Power Devices – High-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs)
• Optoelectronics – High-power LEDs and laser diodes

Technical Specifications (6″ P‑Grade)

Why Choose Homray?

• In‑house growth – Full control over crystal quality and supply chain
• Customization – Available in 4″, 6″, and 8″ with tailored specifications
• Quality assurance – 100% inspection with advanced metrology tools
• Global shipping – Fast delivery to leading semiconductor fabs worldwide

Frequently Asked Questions