As a trusted GaN Epi Wafer Supplier, we manufacture 4inch 6inch and 8inch GaN On Si Epi Wafer, include D-Mode & E-Mode structure. The cap layer of D-Mode is GaN Cap or SiN Cap (Thickness 0-5nm), E-Mode is p-GaN Cap which doped with Mg (Thickness 90-100nm). You can customize your epi layer thickness based on your project requirements. Get a quote today!