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Home > Success Cases > GaN Epi Wafer > GaN On SiC Epi Wafer For Power HEMT

GaN On SiC Epi Wafer For Power HEMT

Project Description

HMT can produce high-quality GaN On SiC Epi Wafer for Power HEMT application. 4inch and 6inch are our major dimension of GaN on SiC Epitaxy wafer. We have D-Mode and E-Mode structure for selecting. With many years of growing experience, HMT become the reliable partner of semiconductor companies. Contact us now!

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M.P: +86-15366208370 ; +86-15366203573
E-mail: kim@homray-material.com;tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com