
GaN On SiC Epi Wafer For Power HEMT
Project Description
HMT can produce high-quality GaN On SiC Epi Wafer for Power HEMT application. 4inch and 6inch are our major dimension of GaN on SiC Epitaxy wafer. We have D-Mode and E-Mode structure for selecting. With many years of growing experience, HMT become the reliable partner of semiconductor companies. Contact us now!




