Epitaxial wafers refer to silicon wafers (or other semiconductor substrates) on which one or multiple layers of single-crystal thin films are grown via controlled crystal growth processes. A prime example is in the wide-bandgap semiconductor sector, where manufacturers like HMT focus on producing high-performance GaN epitaxial wafers. Specifically, HMT specializes in both GaN-On-Silicon and GaN-On-SiC epi wafers, offering them in industry-standard 4-inch and 6-inch dimensions to meet diverse application needs. We use high quality Semi-insulating SiC Substrates and Si Substrates. This newly grown

 

film is called the epitaxial layer, whose crystal lattice structure aligns with that of the substrate (or grows coherently within an acceptable mismatch). However, its thickness, doping concentration, and doping type can be independently and precisely designed. Value: The epitaxial layer addresses the inherent contradictions that cannot be reconciled when manufacturing high-performance devices on a single homogeneous substrate. It enables chip designers to:

Create ideal device layers: Grow nearly perfect crystal layers on inexpensive but defective substrates for device fabrication.

Achieve bandgap engineering: Optimize carrier mobility and device speed by introducing different materials (e.g., SiGe, GaN) or altering doping distributions.

Construct complex structures: Provide high-quality material foundations for advanced transistor architectures (e.g., fins for FinFETs, channels for nanosheets, or the critical epitaxial layers in HEMTs for RF and power electronics).

HMT D-Mode GaN on Si and GaN on SiC Structure: