
AR Glasses Semi-insulating SiC Wafer Manufacturer
Diameter: 150mm /200mm
Grade: Production
Thickness: 500±25um
Type: HPSI
Product Description
We empower the future of wearable computing as a leading supplier of Silicon Carbide (SiC) wafers manufacturers for AR AI glasses. Our focus on producing high-purity, semi-insulating 8 inch SiC substrate wafers addresses the critical need for speed and signal integrity in complex AI-driven optics. These large-diameter SiC wafers offer superior yield and cost-effectiveness for mass production, while their exceptional thermal management capabilities prevent overheating in compact device form factors. By choosing our SiC optics substrates, manufacturers gain a reliable partner in creating durable, high-performance AR glasses that meet the demands of all-day use.
AR Glasses Using HPSI SiC Wafer

Optics Semi-insulating SiC Wafer Spec
| Diameter | 8 Inch 200±0.2 mm |
| Thickness | 500 μm±25μm |
| Grade | Production |
| Surface Orientation | {0001}±0.5° |
| Refractive index | >2.65@589nm |
| Absorption | <0.5%@450-650nm |
| Haze | <0.3%@visible |
Augmented Reality (AR) glasses are intelligent wearable devices that overlay virtual information onto the real world, with the core objective of achieving seamless integration between digital content and the physical environment.
Silicon carbide (SiC), with its high refractive index and excellent thermal conductivity, serves as an ideal substrate material for AR lenses.
A higher refractive index of the substrate material enables a wider field of view (FOV) for AR lenses. A single-layer SiC lens can achieve an FOV of over 80 degrees, offering a slimmer form factor along with a larger and clearer visual experience. The high refractive index also effectively mitigates rainbow artifacts and chromatic dispersion in optical waveguide structures. Meanwhile, the superior thermal conductivity significantly enhances the heat dissipation capacity and overall performance of AR glasses. Additionally, the high hardness and thermal stability of SiC support the introduction of etching processes, thereby improving production capacity and yield rates.
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