氮化镓自支撑衬底厂家_2英寸氮化镓晶片生产商

2 Inch Free-Standing GaN Substrate

Dimensions: Ф 50.8 mm ± 1 mm
Thickness: 350 ± 25 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 15 µm
4 Inch Free-Standing GaN Substrate

Dimensions: Ф 100 mm ± 1 mm
Thickness: 400 ± 50 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 40 µm
Square Free-Standing GaN Substrate

Dimension:10*15mm²
Thickness: 350±25um
Useable Surface Area:＞90%
Conduction Type: N Type,SI Type

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