GaN Epitaxial On Si For RF HEMT
GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
GaN Epitaxial On Si For Power HEMT
GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
Gan Epitaxial On Si For Power HEMT E-Mode
GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
pGaN HEMT On Si Epi Wafer
GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um
6inch GaN Epitaxial Wafer(AlGaN/SiN)
GaN-On-Si Epitaxial Wafer
Substrate Diameter:6 inch
Substrate Thickness:1000um
Cap Layer: SiN/GaN
8 inch GaN-on-Si Epitaxial Wafer
GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
GaN Epi grown on Si wafer
GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
GaN Epitaxial On SiC For Power HEMT
GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN Epitaxial (Epi) Wafer Manufacturers
RF and Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Cap Layer: SiN,GaN,pGaN
4'' GaN-On-SiC Epi Wafer For Power HEMT
GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN On SiC HEMT Epi Wafer
GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI
GaN Epitaxial On Silicon Carbide For RF HEMT
GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
AlGaN/GaN-on-SiC Epi Wafer
GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
GaN Epitaxial On Sapphire For HEMT
GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED
GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire
M.P: +86-15366208370 ; +86-15366203573
E-mail: kim@homray-material.com；tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com