6'' 4H-SI SiC Wafer P Grade

As a leading manufacturer of advanced semiconductor substrates, we specialize in high-purity semi-insulating (HPSI) 4H-SiC wafers. These wafers are the industry-standard foundation for high-performance Radio Frequency (RF) devices, enabling the next generation of wireless communication and advanced electronics.

Our Premium 4H-HPSI SiC Wafer Product Line:

We offer a comprehensive range of wafer sizes to meet diverse manufacturing needs:

• 4 inch (100mm)

• 6 inch (150mm)

• 8 inch (200mm)
  
  

Superior Specifications for Demanding Applications:

Our Silicon Carbide wafers are engineered with exceptional quality and consistency, ensuring optimal performance in your epitaxy and fabrication processes.

• Polytype: 4H-SiC

• Resistivity: ≥1E7 Ω·cm (Semi-Insulating Grade)

• Micropipe Density (MPD): < 0.5 cm⁻²

• Thickness: 500µm ±25µm

• Surface Roughness: Excellent, epi-ready

• Parameters: Superior TTV (Total Thickness Variation), Bow, and LTV (Local Thickness Variation) for high yield.

Our HPSI SiC wafers are the substrate of choice for:

• GaN-on-SiC Epitaxy: Growing high-quality Gallium Nitride epitaxial layers to produce GaN RF epi-wafers.

• RF Semiconductor Devices: Fabrication of HEMTs (High Electron Mobility Transistors) and MMICs (Monolithic Microwave Integrated Circuits).

• 5G Infrastructure: Powering the base stations, massive MIMO, and core network hardware for next-generation 5G communication systems.

• National Defense & Aerospace: Enabling critical technologies in radar systems, electronic warfare (EW), and satellite communications.

• High-Frequency & High-Power Electronics: Ideal for applications requiring excellent thermal conductivity and electrical stability.

The unique properties of our 4H-SiC wafers—including high thermal conductivity, wide bandgap, and semi-insulating nature—make them an indispensable material for reducing signal loss and managing heat in high-power RF devices. By providing substrates with low defect density and excellent surface geometry, we empower our customers to achieve higher device performance, reliability, and manufacturing yields.

Contact us today to discuss your substrate requirements and learn how our high-purity semi-insulating SiC wafers can enhance your GaN RF device manufacturing.