4H-SI 6 inch SiC Wafer Manufacturer

As a leading global SiC Wafer Manufacturer, our company specializes in high-volume production of Semi-insulating SiC wafers. We are at the forefront of technology, offering all grade 6'' HPSI SiC wafers to power the next generation of electric vehicles and industrial systems. Our scalable manufacturing process ensures a reliable and consistent supply chain for our customers' most demanding high-power applications.

Semi-insulating SiC substrates exhibit high resistivity (≥10⁵ Ω·cm) and are primarily used in the fabrication of GaN RF devices. By growing a GaN epitaxial layer on a semi-insulating SiC substrate, a GaN-on-SiC epitaxial waferis produced, which can then be processed into high-performance GaN RF devices.

6 inch 4H-HPSI SiC Wafer Basic Spec


6'' SiC Wafer Picture

With the global development and deployment of 5G communication technology, the construction of 5G base stations is expected to drive new growth opportunities for radio frequency (RF) devices.

Microwave RF devices are fundamental components for signal transmission and reception, serving as the core of wireless communication. They primarily include RF switches, low-noise amplifiers (LNAs), power amplifiers (PAs), filters, and other related devices. Among these, the power amplifier—which amplifies RF signals—directly determines key performance metrics such as wireless communication range and signal quality in both mobile terminals and base stations.

Gallium nitride on silicon carbide (GaN-on-SiC) RF devices combine the high thermal conductivity of SiC with the capability of gallium nitride to deliver high-power RF output at high frequencies. This technology overcomes the inherent limitations of gallium arsenide (GaAs) and silicon-based LDMOS devices, meeting the demands of 5G communication for high-frequency operation and high power handling. As a result, GaN-on-SiC RF devices have gradually become the mainstream technological solution for 5G power amplifiers, particularly those used in macro base stations.