2''(50.8mm) 4H-SiC Wafer Supplier

Sourcing For 2 inch SiC Wafer? As a one-stop SiC substrate wafer manufacturer, we provide from common 4 inch and 6 inch wafers to the advanced 8 inch SiC Wafers, especially stopped model 2'' (50.8mm) SiC Wafer. Our full dimensions ensures we can meet any technical requirement. Our technical team is ready to help you select the perfect SiC substrate for your specific application.
 
What's more, HMT company also have Conductive 2 inch As-cut SiC Wafers, 2 inch SiC Boules. We support customize As-cut wafer thickness like 600um,800um,900um,1000um,1100um etc. Different thickness applied for different applications. Even customize thickness, you can still get the best price and fast leadtime to worldwide by Express.

SiC substrates possess several distinctive characteristics that set them apart from other materials. These include:

• Wide Bandgap: SiC has a bandgap of 3.26 eV, significantly larger than silicon’s 1.12 eV. The wider bandgap enables operation at higher voltages and temperatures.

• High Thermal Conductivity: SiC can withstand high temperatures, making it ideal for high-power applications.

• High Breakdown Field: This property allows devices to sustain high voltages, leading to the development of higher-power components.

• Low Intrinsic Carrier Concentration: This characteristic reduces leakage current, improving device efficiency and reliability.

These properties make SiC an excellent material for power devices and have driven its increasing adoption across industries.