100mm 4H-N SiC Wafer for Research and Production Applications

100mm 4H-SiC Wafer for Advanced Semiconductor Applications

HMT provides high-quality 100mm 4H-SiC wafers designed for research, prototype development and semiconductor device manufacturing. The 4 inch silicon carbide wafer features a conductive N-type substrate structure with excellent crystal quality, controlled electrical properties and optimized surface performance.

Compared with conventional silicon substrates, SiC wafers offer superior breakdown voltage capability, high thermal conductivity and excellent high-temperature stability, making them an ideal foundation for next-generation power semiconductor devices.

Our 100mm SiC substrates are suitable for SiC epitaxial growth, MOSFET fabrication, Schottky diode manufacturing and other wide bandgap semiconductor applications. For customers requiring epitaxial growth applications, HMT also provides Epi Ready 4 inch SiC Substrates optimized for semiconductor manufacturing.

100mm 4inch SiC Wafer Package
 

Key Features of 100mm SiC Wafer

High Crystal Quality 4H-SiC Material

The 4H-SiC crystal structure provides excellent electrical and thermal properties required for high-performance semiconductor devices.

Low Defect Density

Advanced crystal growth and wafer processing technologies help reduce micropipe density and improve wafer reliability.

Conductive N-Type Substrate

The N-type conductive SiC substrate is optimized for power semiconductor applications requiring efficient electrical transport.

Flexible Research and Production Grades

HMT supports research-grade and production-grade 100mm SiC wafers with customized specifications.

Applications of 100mm SiC Wafer

SiC Power Devices

100mm SiC wafers are widely used for manufacturing:

1. SiC MOSFETs
2. Schottky barrier diodes
3. Power modules

Electric Vehicle Electronics

SiC devices fabricated on these substrates improve:

1. inverter efficiency
2. Charging performance
3. power conversion density

Industrial Power Systems

Applications include: renewable energy converters / industrial power supplies / high-voltage switching systems/ ndustrial power supplies

Conductive SiC substrates are primarily employed in the fabrication of power devices, which serve as critical fundamental components in the power electronics industry. These devices are extensively used in electric power conversion and circuit control across various types of power equipment, impacting a wide range of economic and daily life applications.