Home | 中文 English
  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us
  • SiC Wafer (4H-N)
  • SiC Wafer (4H-SI)
  • GaN Epi Wafer
  • GaN Substrate Wafer
  • Free-Standing GaN
  • GaN-On-Sapphire Template
  • GaN HEMT Chip Class Wafer
Home > Products > SiC Wafer (4H-N) > DSP 4-inch SiC Substrate Manufacturer

DSP 4-inch SiC Substrate Manufacturer

Diameter: 100±0.2mm
Grade: R Grade,P Grade 
Thickness: 350±25um
Type: Conductive N 

Product Description

Silicon carbide (SiC) is a core representative of third-generation semiconductor materials, widely adopted by 4 inch SiC substrate manufacturers who produce wafers with key specifications such as thickness of 350um, micro-pipe density (MPD) <0.2 cm⁻², and total thickness variation (TTV) <10um. These high-quality SiC substrates enable the material’s excellent physical properties—including wide bandgap, high breakdown electric field strength, and high thermal conductivity—making SiC an ideal choice for high-voltage, high-temperature, and high-frequency applications.


Key Physical Property Comparison:

  • Bandgap: Approximately 3.26 eV, three times that of silicon (Si), resulting in extremely low leakage current and higher temperature tolerance.

  • Breakdown Field Strength: Approximately 3-4 MV/cm, 10 times that of silicon, meaning the drift layer of devices can be made thinner at the same voltage, significantly reducing on-state resistance.

  • Thermal Conductivity: Approximately 4.9 W/(cm·K), three times that of silicon and even higher than copper, offering excellent heat dissipation and making it highly suitable for high-power-density devices.

  • Electron Saturation Drift Velocity: Twice that of silicon, making it suitable for high-frequency switching applications.

     

Conductive SiC Substrate (N-type):

  • Low resistivity (15-30 mΩ·cm), used for manufacturing power devices (MOSFETs, diodes), with downstream applications in new energy vehicles, photovoltaics, energy storage, etc.

Semi-insulating SiC Substrate:

  • Very high resistivity (>10^5 Ω·cm), used for manufacturing RF devices (HEMT), with downstream applications in 5G communications, radar, etc.; the latest trend is its use in AR glasses for optical waveguide lenses.

 

Downstream Applications (Three Major Drivers):

  • Traditional Core: New energy vehicles (main drive, OBC, DC-DC), photovoltaics and energy storage, charging piles.

  • Emerging Stars: AI server power supplies (PSUs), advanced packaging heat dissipation (CoWoS Interposer), AR glasses.

 

Related Products

  • 4H-Superior SiC Wafer High Performance

  • 4''~8'' 4H-SiC Wafer Test/Dummy Grade

  • 2''(50.8mm) 4H-SiC Wafer Supplier

  • 4'' SiC Wafer 100mm Diameter Producer

  • 4" SiC Wafer N Type Manufacturer

  • 4 inch 4H-SiC Wafer Manufacturer

  • Customizing 6'' SiC Wafer N Type Supplier

  • P Grade SiC Substrate Manufacturers

  • 8 inch 4H-N Type SiC Wafer Producer

  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us

M.P: +86-15366208370 ; +86-15366203573
E-mail: kim@homray-material.com;tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com