P Grade SiC Substrate Manufacturers

Purchase high-quality 2inch to 8inch Silicon Carbide (SiC) Substrates from HMT, a professional SiC Substrate Manufacturer, and benefit from competitive pricing! Our SiC wafers are characterized by excellent surface quality and low micro-pipe density (MPD), ensuring high performance and reliability for your advanced semiconductor applications.

We offer Conductive N-type SiC substrates with the following specifications:

• Thickness: 350µm ± 25µm

• Diameter: 50.8mm, 100mm,150mm,200mm

• Resistivity: 0.015–0.025 Ω·cm

• MPD: < 0.2 cm⁻²

• Surface: Si-face CMP polished

We also support customized wafer thicknesses and technical parameters to meet your specific project requirements. Whether you are working on power devices, RF components, or other SiC-based projects, our substrates provide a solid foundation for innovation and efficiency.

Contact us today to discuss your SiC project needs, request a quote, or learn more about how our products can support your success. We look forward to collaborating with you!

Advantages of SiC Substrate

• High Hardness and Wear Resistance
  With a Mohs hardness of 9.5, SiC is second only to diamond, making it an ideal wear-resistant material.

• High Thermal Conductivity
  SiC has a thermal conductivity of 4.9 W/cm·K, approximately three times that of silicon, offering excellent heat dissipation and suitability for high-temperature environments.

• High Breakdown Electric Field Strength
  The breakdown electric field strength of SiC ranges from 2 to 4 MV/cm—about ten times that of silicon—enabling its use in high-voltage devices and applications.

• Wide Bandgap
  SiC features a bandgap of 3.2 eV (4H-SiC), allowing it to operate at temperatures above 600°C and offering strong radiation resistance.

• High Electron Saturation Velocity
  The electron saturation velocity of SiC is twice that of silicon, supporting high-frequency operations such as in 5G communications and radar systems.