4 inch 4H-SiC Wafer Manufacturer

Diameter: 100±0.2mm
Grade: Production
Thickness: 350±25um
Type: Conductive N

Product Description

Trusted global SiC Wafer Manufacturer HMT company offer P grade 4 inch SiC Wafers both Conductive N type (off axis) and Semi-insulating SI type (on axis). We have SiC Wafer production line: crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Our 4 inch SiC Wafers have low micropipe densitiy and good technical parameters. We will provide best price for you. Contact us and disscuss your project now!

4 inch SiC Wafer Spec

Item	Spec
Diameter	100±0.25mm
Orientation	4° toward <11-20> ± 0.5º
Thickness	350±25um
Dopant	Nitrogen
Primary flat orientation	[1-100]± 5°
Micropipe density	≤ 0.5 ea/cm²
TTV	≤ 10um
BOW	-25~25um
Surface finish	Si-face CMP/ C-face polished

SiC Wafer Pictures
sic wafer supplier 4 inch sic wafer supplier

Core Characteristics and Value of SiC

Silicon carbide (SiC) materials exhibit significantly superior performance compared to traditional silicon-based semiconductors in high-frequency, high-voltage, and high-temperature applications. Its core value lies in:

Improving Energy Efficiency: Reducing energy loss during conversion, such as extending the range of electric vehicles or increasing the conversion efficiency of photovoltaic inverters.

Reducing Size: High-frequency characteristics allow for the use of smaller passive components, making systems lighter and more compact.

Enhancing Reliability: High-temperature stability and excellent thermal conductivity contribute to stable operation in harsh environments and simplify thermal management design.

Applications of SiC Products

*New Energy Vehicles (Core Driver)
*Photovoltaics and Energy Storage
*Industrial Control and Smart Grid
*Communications and Data Centers
*Consumer Fast Charging and Rail Transportation