4''~8'' 4H-SiC Wafer Test/Dummy Grade

Silicon Carbide (SiC) Wafer Manufacturers, such as HMT which provides 4-inch to 8-inch 4H-SiC substrate wafers with competitive pricing and lead times, have positioned SiC as a core material of third-generation semiconductors. It possesses a crystal structure bonded by covalent bonds, endowing it with performance advantages far exceeding those of traditional silicon-based materials. Its bandgap reaches 3.26 eV (three times that of silicon), its breakdown electric field is 2.5 MV/cm (ten times that of silicon), and its thermal conductivity is 490 W/m·K (three times that of silicon). These properties make it perfectly suited for high-temperature, high-frequency, and high-power applications.

• Dimensions: 4inch 6inch and 8inch
  
• Grade: Test Grade
• Dopant: Nitrogen N
• Polytype: 4H
• Thickness: 350um/500um
• Resistivity: 0.015-0.025ohm.cm
• MPD: ＜1cm²
• Si-face Ra: ≤0.5nm
• Package: 25PCS in one cassette

 
4''~8'' 4H-SiC Wafer Applications

New Energy Vehicles: High-Voltage Platform Drives Vehicle-Grade Devices as the Main Battlefield

As new energy vehicles evolve toward "fast charging and long range," 800V high-voltage platforms have become an industry standard. Silicon Carbide MOSFET modules are gradually replacing traditional IGBTs. It is estimated that by 2026, the global penetration rate of Silicon Carbide in new energy vehicles will reach 30%, with the market size for vehicle-grade Silicon Carbide devices exceeding $2 billion. Leveraging cost advantages and breakthroughs in vehicle-grade certifications, domestic companies have entered the supply chains of BYD, Li Auto, XPeng, and others, indicating broad opportunities for domestic substitution.

AI and Computing Infrastructure: Emerging Scenarios Unlock Growth Potential

With the continuous increase in power density of AI computing centers, traditional silicon-based devices can no longer meet the demands for efficient heat dissipation and high-frequency conversion. SiC substrates and power modules have become core solutions. Tech giants such as NVIDIA and Huawei are actively promoting the application of Silicon Carbide in power systems, driving explosive demand for substrates and epitaxial wafers. High-end 12-inch substrate products are in short supply, becoming a core driver of corporate performance growth.

Photovoltaic Energy Storage and Smart Grids: Long-Term Demand Driven by Dual-Carbon Goals

Amid the trend toward integrated "source-grid-load-storage" systems, the demand for Silicon Carbide in photovoltaic inverters, power conversion systems (PCS), and solid-state transformers (SST) continues to grow. SiC devices can reduce equipment losses, shrink size, and meet the requirements of distributed energy grid integration and smart grid regulation. Their applications in industrial energy storage and residential energy storage are gradually expanding, promising a stable long-term market.

High-End Manufacturing and Defense: Breakthroughs in Niche Scenarios with Significant Technology Premiums

 

SiC ceramics, due to their high-temperature resistance and wear resistance, are increasingly used in thermal barrier coatings for aerospace and high-end machine tool cutting tools. Semi-insulating SiC substrates are employed in defense technology applications such as radar and satellites, providing companies with high-margin orders and serving as a key reflection of technological prowess.

 

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