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Home > Products > SiC Wafer (4H-N) > 4H-Superior SiC Wafer High Performance

4H-Superior SiC Wafer High Performance

Dimension: 4inch 6inch 8inch 
Grade: Production
Thickness: 350um
Type: Conductive N

Product Description

SiC Wafer Manufacturer for High Performance Silicon Carbide Substrates

Homray is a professional SiC wafer manufacturer specializing in the development and supply of high-quality silicon carbide substrates for advanced semiconductor applications.

Our SiC wafers are manufactured using high-performance material technologies to meet the demanding requirements of power electronics, RF devices, semiconductor components, and next-generation electronic systems.

With excellent electrical, thermal, and mechanical properties, silicon carbide wafers provide significant advantages compared with traditional semiconductor materials. High thermal conductivity, high breakdown voltage, wide bandgap characteristics, and superior chemical stability make SiC substrates an ideal solution for high-efficiency semiconductor devices.

As an experienced silicon carbide wafer supplier, Homray provides customized wafer solutions including 4H-SiC wafers, semi-insulating SiC wafers, conductive SiC wafers, and high purity SiC substrates. Our products support customers worldwide in developing advanced power devices and semiconductor technologies.



High Performance Silicon Carbide Wafer Solutions

Silicon carbide (SiC) is a third-generation semiconductor material widely used in applications requiring high power density, high temperature operation, and high-frequency performance.

Compared with conventional silicon substrates, SiC wafers offer:

  • Higher breakdown voltage
  • Lower power loss
  • Superior thermal conductivity
  • Higher operating temperature capability
  • Excellent chemical and physical stability

These advantages make SiC semiconductor wafers particularly suitable for electric vehicles, renewable energy systems, industrial power equipment, RF communication devices, and advanced semiconductor applications.

Why Choose HMT as Your SiC Wafer Supplier?

Homray provides professional silicon carbide wafer manufacturing solutions with:

  • Advanced SiC substrate technology
  • Reliable wafer quality
  • Customized specifications
  • Professional technical support
  • Global supply capability

 

Whether you require 4H-SiC wafers, semi-insulating SiC substrates, or customized silicon carbide wafer solutions, Homray can provide high-performance semiconductor materials for your advanced applications.

What is a SiC wafer?

A SiC wafer (silicon carbide wafer) is a semiconductor substrate made from silicon carbide crystal material. It is widely used for high-power, high-frequency, and high-temperature electronic devices.

Why is SiC used instead of silicon?

 

Compared with silicon, SiC wafers offer higher breakdown voltage, better thermal conductivity, and improved efficiency, making them suitable for demanding semiconductor applications.

What types of SiC wafers does HMT provide?

Homray supplies various SiC substrates, including:

 

  • 4H-SiC wafers
  • Semi-insulating SiC wafers
  • Conductive SiC wafers
  • Customized silicon carbide substrates

silicon-carbide-semiconductor-wafer.jpg

4h-sic-wafer-substrate.jpg

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E-mail: kim@homray-material.com;tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com